Reticle focus measurement system using multiple interferometric beams

ABSTRACT

A first set of interferometric measuring beams is used to determine a location of a patterned surface of a reticle and a reticle focus plane for a reticle that is back clamped to a reticle stage. A second set of interferometric measuring beams is used to determine a map of locations of the reticle stage during scanning in a Y direction. The two sets of interferometric measuring beams are correlated to relate the reticle focal plane to the map of the reticle stage. The information is used to control the reticle stage during exposure of a pattern on the patterned surface of the reticle onto a wafer.

RELATED APPLICATIONS

This application is a continuation of U.S. Ser. No. 10/417,257 (now U.S.Pat. No. ______ that issued ______), filed Apr. 17, 2003, which was adivisional patent application of U.S. Ser. No. 10/235,499 (now U.S.Patent No. ______ that issued ______), filed Sep. 6, 2002, which areboth incorporated by reference herein in their entireties.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to controlling a reticle stage duringexposure.

2. Background Art

Historically, in lithographic tools a mounting side and a patterned sideof a reticle are one and the same, establishing a reticle focal plane ata plane of a reticle stage platen. Thus, knowledge of stage position insix degrees-of-freedom (DOF) resulted in knowledge of the reticlepatterned surface position in six DOF. The six DOF are X, Y, Z, Rx, Ry,and Rz, as shown in FIG. 1.

However, mounting (or clamping) of an extreme ultra violet (EUV) reticlewill almost certainly be to a back surface of the reticle (e.g.,opposite from the patterned surface). Backside clamping results in areticle focal plane position relative to the reticle stage that is afunction of reticle flatness, reticle thickness, and reticle thicknessvariation. Thus, in contrast to deep ultra violet (DUV) systems,knowledge of the reticle stage position does not resolve where thepattern of the reticle is located in all six DOF. The out-of-plane DOF(Z, Rx, and Ry) cannot be easily determined due to the thicknessvariation of the reticle. The position of the patterned side (oppositeto the clamped side) of the reticle needs to be known accurately in allsix DOF.

In almost all steppers and scanners three in-plane DOF (X, Y, and Rz)are determined from typical stage metrology schemes usinginterferometers. However, three out-of-plane DOF (Z, Ry, and Rx) aremore difficult to measure. As discussed above, in an EUV tool, Z, Rx,and Ry have to be known with much higher accuracy than in previouslithography tools. The accuracy requirement stems from the need toposition the pattern on the reticle at a focal plane related to opticsof the lithography tool. Also, in some cases, optics are not telecentricat the reticle focal plane, which increases the need for accuratleydetermining the reticle position on the reticle stage to within six DOF.At the same time, it is critical to accurately maintain focus on thepattern on the reticle even though the reticle is not perfectly flat.Therefore, measuring the Z position and the out of plane tilts (Rx andRy) of the patterned side of the reticle in the EUV tool requires tightaccuracy.

Therefore, what is needed is a measuring system and method that caneasily calibrate or correlate a reticle focal plane (for a backsideclamped reticle) to a reticle stage to allow tracking of a patternedsurface of a reticle's position in six DOF using reasonably conventionalstage metrology methods. A measuring system and method is also neededthat maps a reticle surface to surfaces on a reticle stage, which allowsfeedback for stage position to be based on surfaces on the stage insteadof surfaces on the reticle surface.

BRIEF SUMMARY OF THE INVENTION

Embodiments of the present invention provide a method including thesteps of measuring location data of a pattern side of a reticle based ona first set of interferometer measuring beams, measuring map data of areticle stage during scanning of the reticle stage based on a second setof interferometer measuring beams, and controlling the reticle stageduring exposure of a wafer with a pattern on the pattern side of thereticle based on the location data and the map data.

Further embodiments of the present invention provide a method thatincludes the steps of determining a reticle focal plane of a backsideclamped reticle on a reticle stage using a first interferometer,determining positions of the reticle stage during scanning of thereticle stage using a second interferometer, correlating the reticlefocal plane to the positions of the reticle stage, and controlling thereticle stage during an exposure process based on the correlating step.

Still further embodiments of the present invention provide a systemincluding a moveable reticle stage holding a reticle, the reticle havinga patterned side, a dual interferometer device that projects and detectsa first set of interferometer beams from the patterned side of thereticle and a second set of interferometer beams from the reticle stage,and a storage device that stores location data of the reticle measuredby the first set of interferometer beams and map data of the reticlestage measured by the second set of interferometer beams.

Further embodiments, features, and advantages of the present inventions,as well as the structure and operation of the various embodiments of thepresent invention, are described in detail below with reference to theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS/FIGURES

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate the present invention and, togetherwith the description, further serve to explain the principles of theinvention and to enable a person skilled in the pertinent art to makeand use the invention.

FIG. 1 shows an example orientation of a reticle according toembodiments of the present invention.

FIG. 2A shows a portion of a lithographic system or tool using a dualinterferometer according to embodiments of the present invention.

FIG. 2B shows a portion of a lithographic system using twointerferometers according to embodiments of the present invention.

FIGS. 3A and 3B show various configurations of a reticle and a stagebeing measured according to various embodiments of the presentinvention.

FIG. 4 shows a flowchart of an overall measuring and controlling methodfor a lithography tool according to embodiments of the presentinvention.

FIG. 5 shows a flowchart of a measuring and controlling method for areticle according to embodiments of the present invention.

FIG. 6 shows a flowchart of a measuring and controlling method for areticle stage according to embodiments of the present invention.

FIG. 7 shows a portion of a lithographic system for measuring reticleand stage positions according to embodiments of the present invention.

FIG. 8 shows a portion of a lithographic system for measuring reticleand stage positions according to embodiments of the present invention.

FIG. 9A shows a portion of a lithographic system having a side heldreticle according to embodiments of the present invention.

FIG. 9B shows a portion of a lithographic system having a front heldreticle according to embodiments of the present invention.

The present invention will now be described with reference to theaccompanying drawings. In the drawings, like reference numbers indicateidentical or functionally similar elements. Additionally, the left-mostdigit(s) of a reference number identifies the drawing in which thereference number first appears.

DETAILED DESCRIPTION OF THE INVENTION

A first set of interferometric measuring beams is used to determine alocation of a patterned surface of a reticle and a reticle focus planefor a reticle that is clamped (e.g., back, side, or front clamped) to areticle stage. A second set of interferometric measuring beams is usedto determine a map of locations of the reticle stage during scanning ina Y direction. The two sets of interferometric measuring beams arecorrelated to relate the reticle focal plane to the map of the reticlestage. The information is used to control the reticle stage duringexposure of a pattern on the patterned surface of the reticle onto awafer.

FIG. 1 shows six degrees of freedom (DOF) for a reticle 100 oriented inor parallel to an X-Y plane according to embodiments of the presentinvention. Again, the six DOF are X (along the X axis), Y (along the Yaxis), Z (along the Z axis), Rx (rotation around the X axis), Ry(rotation around the Y axis), and Rz (rotation around the Z axis). Themore easily determinable DOF are the X, Y, and Rz based on a reticlestage's movements. In the embodiments discussed below, the DOF that arethe focus of the discussion below are Z and Ry. It is to be appreciatedthat any DOF can be determined by the appatarus and methods below if theorientation of the reticle 100 is changed.

FIG. 2A shows a portion 200 of a lithography tool according toembodiments of the present invention. Portion 200 includes a reticlestage 202 with a backside clamped reticle 204 that has a pattern 206.Although not drawn to scale, an interferometer system 208 includes twointerferometers 208A and 208B. Each interferometer 208A and 208Bprojects illuminating (I) light from illumination devices 210 towardsportion 200. In various embodiments, illumination devices 210 can belight sources, lasers, or the like with or without focusing or expandingoptical devices. A first set of interferometric measuring beams RSZ1 andRSZ2 from first interferometer 208A are reflected from first 212 andsecond 214 positions, respectively, on reticle 204. First position 212is adjacent a first side of pattern 206 and second position 214 isadjacent a second side of pattern 206. The reflected beams are receivedby detectors (D) 216. Signals corresponding to the detected beams arestored in a storage device 218 either before or after being processed bycontroller 220.

Again with reference to FIG. 2A, similarly, a second set ofinterferometric measuring beams RSZ3 and RSZ4 from second interferometer208B are reflected from first 222 and second 224 points, respectively,on reticle stage 202 and detected by detectors 216. Signals correlatingto the detected beams are then stored in storage 218. In the embodimentsshown and described above, all four measuring points, 212, 214, 222, and224 substantially lie along a line having a same Y value. In otherembodiments this may be required.

FIG. 2B shows an interferometer 208′ including a first interferometer208A′ and a second interferometer 208B′ according to embodiments of thepresent invention.

FIGS. 3A and 3B show a first and second posisble position of reticle 204according to embodiments of the present invention. To calcuale the Z andRy values, interferometric techniques are performed by theinterferometer system 208 or 208′ and values are determined bycontroller 220 (FIG. 2A). Z can be determined by averging distances Z1and Z2 and Ry can be determined based on: ${Ry} = \frac{{Z2} - {Z1}}{L}$In other embodiments, signals represent an interferometric measurementbased on either intensity, phase, distance, or the like of two relatedbeams (i.e., RSZ1 and RSZ2 or RSZ3 and RSZ4) being compared. A resultingsignal from the comparison corresponds to paramaters (e.g., position,orientation, tilt, etc.) of either reticle stage 202 or reticle 204.

With reference to FIG. 3A, the calculation of Z and Ry is as follows fora reticle 204 that lies on or parallel to the Y axis. In regards to Z,Z1 is approximately equal to Z2 because reticle 204 lies in or parallelto the Y-axis. Thus, Z≈Z1≈Z2. In regards to Ry, it is substantiallyzero. This is because, if Z≈Z2, then Z2−Z1≈0.

With reference to FIG. 3B, the calculation of Z and RY is as follows fora reticle that is rotated Ry around the Y axis. In regards to Z, it isequal to (Z1+Z2)/2, or the average of the two values. In regards to Ry,it is equal to (Z2−Z1)/L, as is shown in the equation above.

Therefore, in various embodiments, the four interferometer beamsRSZ1-RSZ4 are used to determine two DOF (Z and Ry) of the patternedsurface 206 of reticle 204. In these embodiments, Z is a direction aboutnormal to the patterned surface 206 and parallel to the lithographictool's optical axis. Also, in these embodiments, Ry is a rotation abouta scan axis of the reticle stage 202. As described above, twointerferometer beams (RSZ1 and RSZ2) reflect off of pattern surface 206of reticle 204 on either side of the pattern 206. These beams cannot beused during lithographic printing because the reticle stage 202 has totravel (in the scan Y direction shown as an arrow in FIGS. 2A and 2B)further than a physical length of the reticle 204. This causesdiscontinuous signals from these two interferometer beams (RSZ1 andRSZ2) as the beams run off of a reticle surface. This discontinuitymakes accurate stage control in Z and Ry difficult to nearly impossible.Also, other masking functions at the reticle focal plane (framing blades(not shown)) make the use of these two beams (RSZ1 and RSZ2) impracticalfor control of reticle stage 202 under lithography conditions becausethe blades will cut off the interferometer beams (RSZ1 and RSZ2) everytime a scan is made.

Also, in various embodiments, the other two interferometer beams (RSZ3and RSZ4) are positioned to reflect off of surfaces on the reticle stage202. There are numerous options for the configuration of thesereflective surfaces. In some embodiments, a first reflective surface(e.g., with point 222) of reticle stage 202 can be oriented in orparallel to the X-Y plane to give Z position feedback. Then, a secondreflective surface (e.g., with point 224) of reticle stage 202 can beoriented in or parallel to the X-Y plane. Alternate configurations arepossible where the second reflective surface of reticle stage 202 can beoriented in or parallel to a Y-Z plane. Then, the second surface yieldsRy stage position information. In further alternative embodiments,various other orientations exist where calculations would yield Z and Ryvalues. The lithographic tool would typically look at the differencebetween two interferometers (e.g., dual interferometer 210 orinterferometers 210A′ and 210B′) with separation in either the X or Zdirections, thus giving Ry information.

FIGS. 4-6 show flowcharts of methods 400, 500, and 600 according toembodiments of the present invention. A summary of those methodsfollows. After loading reticle 204 (and occasionally during calibrationor between calibrations once or periodically) onto reticle stage 202 thedata from RSZ1 and RSZ2 can be used to locate the patterned surface 206at a reticle focal plane established by projection optics (not shown) ofthe lithography tool or any other desired plane determined by machinesetup. Then, while reticle stage 202 is scanned in the Y direction sothat reticle 204 remains in the chosen plane, the values of RSZ3 andRSZ4 are recorded and stored as a map. When the lithography tool isready to do exposures, the data from the map will be used to control thereticle stage 202, and thereby the reticle 204, in Z and Ry so thatpattern 206 is always in the chosen plane. Thus, even if beams RSZ1 andRSZ2 are discontinuous due to running off of the reticle 204 at eitherend of the scans, the stage control is not compromised because thecontrol feedback is coming from beams RSZ3 and RSZ4. In anotherembodiment, beams RSZ1 and RSZ2 can be constantly monitored duringlithography to verify the map and to possibly do continuous updating ofthe map used for stage Z and Ry control. It is to be appreciated thatthere are other ways of determining stage position during scanning whilemaintaining pattern 206 of reticle 204 in a chosen plane, which are allcontemplated by the invention.

FIG. 4 depicts a flowchart of method 400 according to embodiments of thepresent invention (steps 402-410). At step 402, a reticle (e.g., reticle204) is back clamped to a reticle stage (e.g., stage 202). At step 404,a reticle focal plane is determined based on a first set ofinterferometric measuring beams (e.g., RSZ1 and RSZ2). At step 406, amap of reticle stage locations is determined during scanning of thereticle stage based on a second set of interferometric measuring beams(e.g., RSZ3 and RSZ4). In step 408, the measured reticle focal plane iscorrelated to the map of the reticle stage. In step 410, the reticlestage is controlled based on the correlation during exposure of apattern on the reticle onto a wafer. The exposure is accomplishedthrough processes known in the art.

FIG. 5 depicts a flowchart of method 500 that can occur during step 406according to embodiments of the present invention. At step 502, a firstbeam (e.g., RSZ1) is reflected from a location (e.g., point 212)adjacent a first side of a reticle pattern (e.g., pattern 206). At step504, a second beam (e.g., RSZ2) is reflected from a location (e.g.,point 214) adjacent a second side of the reticle pattern. At step 506,the two reflected beams are detected in an interferometer (e.g.,interferometer 208 or 208′). At step 508, an interferometric operationis performed (e.g., in controller 220) on the received signals todetermine a location of the reticle pattern, and thus the reticle focusplane. At step 510, location information is stored (e.g., in storage218). At step 512, which can be part of step 410, the locationinformation is used (e.g., by stage controller 228) to control a reticlestage (e.g., stage 202) during an exposure process.

FIG. 6 depicts a flowchart of a method 600 that can occur during step408 according to embodiments of the present invention. At step 602, areticle stage (e.g., stage 202) is scanned in a Y direction. At step604, a first measuring beam (e.g., RSZ3) is reflected off a point (e.g.,point 222) on the reticle stage that is parallel to or oriented in anX-Y plane. At step 606, a second measuring beam (e.g., RSZ4) isreflected off a point (e.g., point 224) on the reticle stage that isparallel to or oriented in the X-Y or Y-Z plane. At step 608, the firstand second measuring beams are detected by an interferometer (e.g.,interferometers 208 or 208′). At step 610, stage position information isdetermined (e.g., by processor 220) based on interferometric valuesgenerated by the interferometer. At step 612, a map is generated (e.g.,by controller 220) of the stage position during the scan based on theinterferometric values. At step 614, the map is stored (e.g., in storage218). At step 616, which can be part of step 410, data from the storedmap is used (e.g., by stage controller 228) to control the reticle stageduring an exposure process.

FIG. 7 shows a portion 700 of a lithography tool used to measure stage202 and reticle 204 positions according to embodiments of the presentinvention. In this embodiment, although not shown, beams RSZ1-RSZ3 andRSX1-RSX2 are produced by and detected by an interferometer similar to208 or 208′ discussed above, or any other interferometer. As discussedabove, RSZ1 and RSZ2 are used to determined characteristics aboutreticle 204 and RSZ3 is used to determine Z of stage 202. RSX1 and RSX2are used to determined both an X position of stage 202 and Ry. Ry isdetermined by: ${Ry} = \frac{{X2} - {X1}}{L}$

FIG. 8 shows a portion 800 of a lithography tool used to measure stage202 and reticle 204 positions according to embodiments of the presentinvention. Again, in this embodiment, although not shown, beamsRSZ1-RSZ5, RSY1-RSY3, and RSX1 are produced by and detected by aninterferometer similar to 208 or 208′ discussed above, or any otherinterferometer. This embodiment shows beams that can enabledetermination of all six DOF for stage 202 and/or reticle 204. BeamsRSZ1 and RSZ2 allow for Z and Ry of reticle 204 to be determined. BeamsRSZ1 and RSZ5 allows for Rx of reticle 204 to be determined. Beams RSZ3and RSZ4 allow for Z and Ry of stage 202 to be determined. Beam RSX1allows for X of stage 202 to be determined. Beam RSY1, RSY2, and/or RSY3allow for Y of stage 202 to be determined. Beams RSY2 and RSY3 allow forRz of stage 202 to be determined. Beams RSY1 and RSY3 allow for Rx ofstage 202 to be determined. These determination are made based on theabove formulas, similar formulas to the above, or any other knowninterferometric formulas.

FIG. 9A shows a portion 900 of a lithography tool according toembodiments of the present invention. Portion 900 includes reticle 204that is clamped at its sides to stage 902. In some embodiments, reticle204 can be coupled to a support device (e.g., a stiffener) 904 tocounteract any warping force on reticle 202. Beams RSZ1-RSZ4 can be usedas described above to determine Z and Ry of stage 902 and/or reticle204.

FIG. 9B shows a portion 920 of a lithography tool according toembodiments of the present invention. Portion 920 includes reticle 204that is front clamped to stage 922. In some embodiments, reticle 204 canbe coupled to support device 904 to counteract any warping force onreticle 202. Beams RSZ1-RSZ4 can be used as described above todetermined Z and Ry of stage 922 and/or reticle 204.

Conclusion

While various embodiments of the present invention have been describedabove, it should be understood that they have been presented by way ofexample only, and not limitation. It will be apparent to persons skilledin the relevant art that various changes in form and detail can be madetherein without departing from the spirit and scope of the invention.Thus, the breadth and scope of the present invention should not belimited by any of the above-described exemplary embodiments, but shouldbe defined only in accordance with the following claims and theirequivalents.

1. A system, comprising: a means for holding that holds a patterningdevice having a patterned side; a means for measuring that projects anddetects a first set of interferometric beams from the patterned side ofthe patterning device and a second set of interferometric beams from themeans for holding; and means for storing that stores location data ofthe patterning device measured by the first set of interferometric beamsand map data of the means for holding measured by the second set ofinterferometric beams.
 2. The system of claim 1, further comprising:means for controlling that controls the means for holding duringexposure of a patterning device pattern on a substrate based on thestored map data and the stored location data.
 3. The system of claim 1,wherein the patterning device is back clamped to the means for holding.4. The system of claim 1, wherein the patterning device is side clampedto the means for holding.
 5. The system of claim 1, wherein thepatterning device is front clamped to the means for holding.
 6. Thesystem of claim 1, wherein the means for measuring comprises twointerferometer sections.
 7. The system of claim 1, wherein the means formeasuring comprises two interferometers.
 8. A system, comprising: meansfor measuring location data of a pattern side of a patterning devicebased on a first set of interferometric measuring beams; means formeasuring map data of a patterning device stage during scanning of thepatterning device stage based on a second set of interferometricmeasuring beams; and means for controlling the patterning device stageduring exposure of a substrate with a pattern on the pattern side of thepatterning device based on the location data and the map data.
 9. Thesystem of claim 8, wherein the means for measuring location data:reflects a first beam of the first set of beams from a point adjacent afirst side of the pattern on the patterning device; and reflects asecond beam of the first set of beams from a point adjacent a secondside of the pattern on the patterning device.
 10. The system of claim 8,wherein the means for measuring map data: reflects a first beam of thesecond set of beams from a point in a plane parallel to an X-Y plane ofthe patterning device stage; and reflects a second beam of the secondset of beams from a point in a plane parallel to the X-Y plane of thepatterning device stage.
 11. The system of claim 8, wherein the meansfor measuring map data: reflects a first beam of the second set of beamsfrom a point in a plane parallel to an X-Y plane of the patterningdevice stage; and, reflects a second beam of the second set of beamsfrom a point in a plane parallel to a Y-Z plane of the patterning devicestage.
 12. The system of claim 8, wherein the means for measuring mapdata: reflects a first beam of the second set of beams from a point in aplane parallel to an X-Y plane of the patterning device stage; andreflects a second beam of the second set of beams from a point in aplane oriented in the X-Y plane of the patterning device stage.
 13. Thesystem of claim 8, wherein the means for measuring map data: reflects afirst beam of the second set of beams from a point in a plane parallelto an X-Y plane of the patterning device stage; and reflects a secondbeam of the second set of beams from a point in a plane oriented in aY-Z plane of the patterning device stage.
 14. The system of claim 8,wherein the means for measuring map data: reflects a first beam of thesecond set of beams from a point in a plane oriented in an X-Y plane ofthe patterning device stage; and reflects a second beam of the secondset of beams from a point in a plane parallel to the X-Y plane of thepatterning device stage.
 15. The system of claim 8, wherein the meansfor measuring map data: reflects a first beam of the second set of beamsfrom a point in a plane oriented in an X-Y plane of the patterningdevice stage; and reflects a second beam of the second set of beams froma point in a plane parallel to a Y-Z plane of the patterning devicestage.
 16. The system of claim 8, wherein the means for measuring mapdata: reflects a first beam of the second set of beams from a point in aplane oriented in an X-Y plane of the patterning device stage; andreflects a second beam of the second set of beams from a point in aplane oriented in the X-Y plane of the patterning device stage.
 17. Thesystem of claim 8, wherein the means for measuring map data: reflects afirst beam of the second set of beams from a point in a plane orientedin an X-Y plane of the patterning device stage; and reflects a secondbeam of the second set of beams from a point in a plane oriented in aY-Z plane of the patterning device stage.
 18. The system of claim 8,wherein the means for measuring location data: determines a degree offreedom in a Z direction of the pattern side of the patterning device,wherein the Z direction is normal to the pattern side of the patterningdevice; and determines a degree of freedom for an Ry rotation of thepattern side of the patterning device, wherein the Ry rotation is abouta scan axis of the patterning device stage.
 19. The system of claim 8,wherein the means for controlling determines a patterning device focalplane based on the measuring location data.
 20. The system of claim 19,wherein the means for controlling: correlates the patterning devicefocal plane to the measured map data of the patterning device stage; andtracks a position of the pattern side of the patterning device based onthe correlating step during the exposure of the substrate.
 21. Thesystem of claim 8, wherein the means for controlling determines apredetermined patterning device plane based on the measuring locationdata.
 22. The system of claim 21, wherein the means for controlling:correlates the predetermined patterning device plane to the measured mapdata of the patterning device stage; and tracks a position of thepattern side of the patterning device based on the correlating stepduring the exposure of the substrate.
 23. The system of claim 8, whereinthe means for measuring location data measures the location data oncebetween calibrations.
 24. The system of claim 8, wherein the means formeasuring location data measures the location data periodically betweencalibrations.
 25. The system of claim 8, wherein the means for measuringlocation data continuously measures the location data.
 26. A system,comprising: first means for interferometrically determining a plane of aclamped patterning device on a patterning device stage; second means forinterferometrically determining positions of the patterning device stageduring scanning of the patterning device stage using a secondinterferometer; means for correlating the plane to the positions of thepatterning device stage; and means for controlling the patterning devicestage during an exposure process based on signals from the means forcorrelating.